| PART |
Description |
Maker |
| FQD2N100 FQU2N100 FQU2N100TU FQD2N100TF FQD2N100TM |
1000V N-Channel QFET
1000V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| OM6028SC OM6027SC OM6026SC OM6025SC OM6031SC OM603 |
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
400V Single N-Channel Hi-Rel MOSFET in a D3 package
500V Single N-Channel Hi-Rel MOSFET in a TO-259AA package
1000V Single N-Channel Hi-Rel MOSFET in a TO-259AA package
400V Single N-Channel Hi-Rel MOSFET in a TO-259AA package
POWER MOSFETS IN HERMETIC ISOLATED JEDEC TO-258AA SIZE 6 DIE
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 22A I(D) | TO-259AA
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 10A I(D) | TO-258AA
1000V, N-Channel, 10Amp MOSFET, High Energy Capability(1000V , 10A,N沟道，MOS场效应管（高能容量）)
400V, N-Channel, 24Amp MOSFET, High Energy Capability(400V , 24A,N沟道，MOS场效应管（高能容量）)
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 晶体管| MOSFET的| N沟道| 400V五（巴西）直| 24A条（丁）|59AA
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 晶体管| MOSFET的| N沟道| 400V五（巴西）直| 24A条（丁）|58AA
Isolated Hermetic Metal Package
|
International Rectifier
ETC
List of Unclassifed Manufacturers
Omnirel
Microsemi, Corp.
Wieland Electric, Inc.
|
| OM6050SJ OM6051SJ OM6052SJ OM6053SJ OM6054SJ OM605 |
High Current, High Voltage 1000V , 10 Amp N-Channel, MOSFET, High Energy Capability(大电流，高电压，1000V , 10A，N沟道，MOS场效应管（高能容量）) 高电流，高电000V0安培N沟道，MOSFET的高能能力（大电流，高电压，1000V0A条，沟道来说，MOS场效应管（高能容量）
HIGH CURRENT MOSFET IN ISOLATED, TO-267 HERMETIC PACKAGE, SIZE 7 DIE, LOW RDS(on)
500V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
100V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
600V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
200V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
|
International Rectifier
|
| RURP8100 MUR8100E FN2780 MURP810 |
8A/ 1000V Ultrafast Diodes
From old datasheet system
(MUR8100E / MURP8100) 8A / 1000V Ultrafast Diodes
8A, 1000V Ultrafast Diodes(8A, 1000V超快二极用于开关电 8 A, 1000 V, SILICON, RECTIFIER DIODE, TO-220AC
8A, 1000V Ultrafast Diodes 8A条，1000V共超快二极管
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| APT1002R4BN APT1002RBN |
POWER MOS IV 1000V 7.0A 2.00 Ohm / 1000V 6.5A 2.40 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
| APT17F100B APT17F100S |
N-Channel FREDFET 1000V, 17A, 0.80Ω Max, trr ?45ns
N-Channel FREDFET 1000V, 17A, 0.80ヘ Max, trr ÷245ns
|
Microsemi Corporation
|
| HGTG20N100D2 |
20A, 1000V N-Channel IGBT 34 A, 1000 V, N-CHANNEL IGBT, TO-247
20A/ 1000V N-Channel IGBT
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| SCD5393S |
VOLTAGE 200V ~ 1000V 1.0 AMP Glass Passivated Rectifier
|
SeCoS Halbleitertechnologie GmbH
|
| 4GBJ8005 4GBJ801 4GBJ804 4GBJ806 4GBJ810 4GBJ802 4 |
Voltage 50V ~ 1000V 8.0 Amp Glass Passivited Bridge Rectifiers
|
SeCoS Halbleitertechnologie GmbH
|
| RS1505G |
VOLTAGE 50V ~ 1000V 15.0 AMP Glass Passivated Bridge Rectifiers
|
SeCoS Halbleitertechnologie...
|
| GBJ20005 GBJ2001 |
Voltage 50V ~ 1000V 20.0 Amp Glass Passivited Bridge Rectifiers
|
SeCoS Halbleitertechnologie GmbH
|
| W13NK100Z STW13NK100Z STW13NK100Z_06 STW13NK100Z06 |
N-channel 1000V - 0.56?/a> - 13A - TO-247 Zener - Protected SuperMESH?/a> PowerMOSFET
N-channel 1000V - 0.56з - 13A - TO-247 Zener - Protected SuperMESH⑩ PowerMOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
